Effect Of As Passivation On Vapor-Phase Epitaxial Growth of Ge on (211)Si As A Buffer Layer For CdTe Epitaxy
نویسنده
چکیده
searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggesstions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA, 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any oenalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS.
منابع مشابه
Low-temperature solid-phase heteroepitaxial growth of Ge-rich SiXGel --x alloys on Si (100) by thermal annealing a-Ge/Au bilayers
Heteroepitaxial layers of S&Gel-, alloys were grown on Si( 100) by thermal annealing bilayers of a-Ge/Au deposited on single-crystal Si (sc-Si) substrates at 300 “C!. During annealing, Ge dissolves into the Au layer and then grows epitaxially to the substrate, with the final structure changing from a-Ge/Au/sc-Si to Au/Si,Ge,-,/sc-Si. The Si,Ge,-, layer was found to be Ge rich (~~0.15) from AES ...
متن کاملAg buffer layer effect on magnetization reversal of epitaxial Co films
Nano-sized Ag(111) islands were first prepared by using molecular beam epitaxy technique on dilutedhydrofluoric acid etched Si(111) substrate. Epitaxial Co films were then grown onto the Ag films at 100 °C to decrease interdiffusion. The Ag buffer layer designed to form isolated islands with {111} sidewalls on the Si(111) substrate, and provided Co films (111) texture growth to study the correl...
متن کاملHeterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors
Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogene...
متن کاملA Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-wire Chemical Vapor Deposition for Photovoltaic Devices
We have investigated the low-temperature epitaxial growth of thin silicon films by hotwire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 μm on Si(100) substrates at a substrate temperature of 230...
متن کاملDislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy
InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with ...
متن کامل